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每页显示20 条，共找到 285 条结果 <2/15>

	标准编号	标准名称	发布部门	发布日期	状态
	DIN EN 62416 (2010-12)	Semiconductor Devices - Hot Carrier Test On Mos Transistors	German Ins..	2010-12-01	现行
	NF EN 62416:2010	Semiconductor Devices - Hot Carrier Test On Mos Transistors	Associatio..	2010-11-01	现行
	NF EN 62417:2010	Semiconductor Devices - Mobile Ion Tests For Metal-Oxide Semiconductor Field Effect Transistors (Mosfets)	Associatio..	2010-11-01	现行
	BS EN 62416:2010	Semiconductor devices. Hot carrier test on MOS transistors	British St..	2010-07-31	现行
	DS EN 62417:2010	Semiconductor Devices - Mobile Ion Tests For Metal-Oxide Semiconductor Field Effect Transistors (Mosfets)	Danish Sta..	2010-07-19	现行
	BS EN 62417:2010	Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)	British St..	2010-06-30	现行
	EIA JESD 354:1968 (R2009)	The Measurement Of Transistor Equivalent Noise Voltage And Equivalent Noise Current At Frequencies Of Up To 20 Khz	JEDEC Soli..	2009-03-01	现行
	EIA JESD 371:1970 (R2009)	The Measurement Of Small-Signal Vhf-Uhf Transistor Short-Circuit Forward Current Transfer Ratio	JEDEC Soli..	2009-03-01	现行
	EIA JESD 311:1981 (R2009)	Measurement Of Transistor Noise Figure At Mf, Hf, And Vhf	JEDEC Soli..	2009-03-01	现行
	EIA JESD 340:1967 (R2009)	Standard For The Measurement Of Cre	JEDEC Soli..	2009-03-01	现行
	EIA JESD 435:1976 (R2009)	Standard For The Measurement Of Small-Signal Transistor Scattering Parameters	JEDEC Soli..	2009-03-01	现行
	EIA JESD 353:1968 (R2009)	The Measurement Of Transistor Noise Figure At Frequencies Up To 20 Khz By Sinusoidal Signal-Generator Method	JEDEC Soli..	2009-03-01	现行
	EIA JESD 372:1970 (R2009)	The Measurement Of Small-Signal Vhf-Uhf Transistor Admittance Parameters	JEDEC Soli..	2009-03-01	现行
	NF EN 62417:2008	Mobile Ion Tests	Associatio..	2008-12-01	被替代
	NF EN 62416:2008	Hot Carrier Test On Mos Transistors	Associatio..	2008-12-01	被替代
	NBN EN 120003:2008	Blank Detail Specification: Phototransistors, Photodarlington Transistors, Phototransistor Arrays	Belgian St..	2008-04-24	现行
	NBN EN 120004:2008	Blank Detail Specification: Ambient Rated Photocouplers With Phototransistor Output	Belgian St..	2008-04-24	现行
	BS IEC 60747-4:2007	Semiconductor devices. Discrete devices. Microwave diodes and transistors	British St..	2008-02-29	现行
	08/30177349 DC	BS EN 62416. Hot carrier test on MOS transistors	British St..	2008-01-31	被替代
	BS IEC 60747-9:2007	Semiconductor devices. Discrete devices. Insulated-gate bipolar transistors (IGBTs)	British St..	2007-11-30	现行

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