三极管 -环标网

欢迎来到寰标网！客服QQ：772084082 加入会员

[个人会员] 登录/ 注册我的订单2 购物车我的收藏标准服务

全部国内标准国际标准

已选条件： 三极管

国家：

标准状态：

每页显示20 条，共找到 285 条结果 <6/15>

	标准编号	标准名称	发布部门	发布日期	状态
	NEN IEC 60747-4:2007	Semiconductor Devices - Discrete Devices - Part 4: Microwave Diodes And Transistors	Nederlands..	2007-10-01	现行
	NEN IEC 60747-9:2007	Semiconductor Devices - Discrete Devices - Part 9: Insulated-gate Bipolar Transistors (igbts)	Nederlands..	2007-10-01	现行
	IEC 60747-9 Ed. 2.0	Semiconductor devices - Discrete devices Part 9: Insulated-gate bipolar transistors (IGBTs)	Internatio..	2007-09-26	现行
	IEC 60747-4 Ed. 2.0	Semiconductor devices - Discrete devices Part 4: Microwave diodes and transistors	Internatio..	2007-08-23	现行
	DIN IEC 62416 (2007-08)	Hot Carrier Test on MOS Transistors (IEC 47/1902/CD:2007)	German Ins..	2007-08-01	被替代
	07/30164950 DC	IEC 60747-7. Semiconductor devices. Discrete devices. Part 7. Bipolar transistors (BTRs)	British St..	2007-04-19	废止
	07/30161967 DC	BS EN 60747-8. Semiconductor devices. Discrete devices. Part 8. Field-effect transistors	British St..	2007-01-30	废止
	DIN EN 62373 (2007-01)	Bias-temperature Stability Test For Metal-oxide, Semiconductor, Field-effect Transistors (mosfet)	German Ins..	2007-01-01	现行
	KS C IEC 60747-7-1:2006	Semiconductor devices - Discrete devices - Part 7:Bipolar transistors - Section One:Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification	Korean Sta..	2006-12-11	现行
	KS C IEC 60747-4:2006	Semiconductor devices - Discrete devices - Part 4:Microwave diodes and transistors	Korean Sta..	2006-12-11	现行
	KS C IEC 60747-7-2:2006	Semiconductor devices - Discrete devices - Part 7:Bipolar transistors - Section Two:Blank detail specification for case-rated bipolar transistors for low-frequency amplification	Korean Sta..	2006-12-11	现行
	KS C IEC 60747-7:2006	Semiconductor devices - Discrete devices - Part 7:Bipolar transistors	Korean Sta..	2006-12-11	现行
	KS C IEC 60747-7-3:2006	Semiconductor devices - Discrete devices - Part 7:Bipolar transistors - Section three:Blank detail specification for bipolar transistors for switching applications	Korean Sta..	2006-12-11	现行
	KS C IEC 60747-7-4:2006	Semiconductor devices - Discrete devices - Part 7:Bipolar transistors - Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification	Korean Sta..	2006-12-11	现行
	PN EN 62373:2006	Bias-temperature Stability Test For Metal-oxide, Semiconductor, Field-effect Transistors (mosfet)	Polish Com..	2006-10-10	现行
	KS C IEC 60317-15:2006	Specifications for particular types of winding wires-Part 15:Polyesterimide enamelled round aluminium wire, class 180	Korean Sta..	2006-09-18	被替代
	BS IEC 60747-7-5:2005	Semiconductor devices. Discrete devices. Bipolar transistors for power switching applications	British St..	2006-01-19	被替代
	KS C IEC 60317-13:2005	Specifications for particular types of winding wires-Part 13:Polyester or polyesterimide overcoated with polyamide-imide enamelled round copper wire, class 200	Korean Sta..	2005-12-28	被替代
	NEN IEC 60747-7-5:2005	Semiconductor Devices - Discrete Devices - Part 7-5: Bipolar Transistors For Power Switching Applications	Nederlands..	2005-08-01	被替代
	NEN EN 120003:2005	Blank Detail Specification: Phototransistors, Photodarlington Transistors, Phototransistor Arrays	Nederlands..	2005-08-01	现行

全选

首页上一页 ...4 567 8 9 ...下一页尾页