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[SJ 2307-1983] 防雷型氧化锌压敏电阻器总技术条件[已作废]
发布时间：1983-02-24
实施时间：1983-10-01
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[SJ 2309-1983] 消噪型氧化锌压敏电阻器总技术条件[已废止]
发布时间：1983-02-24
实施时间：1983-10-01
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[SJ 2309.1-1983] ＭＹＺ１型消噪用氧化锌压敏电阻器[已废止]
发布时间：1983-02-24
实施时间：1983-10-01
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[SJ 2214.1-1982] 半导体光敏管测试方法总则[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2214.10-1982] 半导体光敏二、三极管光电流的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2214.2-1982] 半导体光敏二极管正向压降的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2214.3-1982] 半导体光敏二极管暗电流的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2214.4-1982] 半导体光敏二极管反向击穿电压的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2214.5-1982] 半导体光敏二极管结电容的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2214.6-1982] 半导体光敏三极管集电极－发射极反向击穿电压的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2214.7-1982] 半导体光敏三极管饱和压降的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2214.8-1982] 半导体光敏三极管暗电流的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2214.9-1982] 半导体光敏二、三极管脉冲上升、下降时间的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2215.1-1982] 半导体光耦合器测试方法总则[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2215.10-1982] 半导体光耦合器直流电流传输比的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2215.11-1982] 半导体光耦合器脉冲上升、下降、延迟、贮存时间的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2215.12-1982] 半导体光耦合器入出间隔离电容的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2215.13-1982] 半导体光耦合器入出间绝缘电阻的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2215.14-1982] 半导体光耦合器入出间绝缘电压的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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[SJ 2215.2-1982] 半导体光耦合器（二极管）正向压降的测试方法[已作废]
发布时间：1982-11-30
实施时间：1983-07-01
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