SEMI M66:2010(R2021)现行
Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique
出版：Semiconductor Equipment & Materials Institute
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基本信息
标准编号： SEMI M66:2010(R2021)
标准类别：Test Method
出版单位：Semiconductor Equipment & Materials Institute
标准页数：0
标准简介
Continued scaling of CMOS integrated circuit dimensions is reaching a point where materials changes as well as lithographic advances are required to meet the projections of Moore’s Law and the International Technology Roadmap for Semiconductors.
