ASTM F996-98(2003)被替代
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
出版：American Society for Testing and Materials
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基本信息
标准编号： ASTM F996-98(2003)
发布时间：1998/5/10 0:00:00
标准类别：Standard
出版单位：American Society for Testing and Materials
标准页数：7
标准简介
CONTAINED IN VOL. 10.04, 2006Covers the use of the subthreshold charge separation technique for the analysis of ionizing radiation degradation of a gate dielectric in a metal oxide semiconductor field effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET. Gives procedures for measuring the MOSFET subthreshold current voltage characteristics and for the calculation of results.
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