BS 6493-2.2(1986) : 1986被替代
SEMICONDUCTOR DEVICES - INTEGRATED CIRCUITS - RECOMMENDATIONS FOR DIGITAL INTEGRATED CIRCUITS
出版：British Standards Institution
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Chapter I: General 1. Introductory note 2. Scope Chapter II: Terminology and letter symbols 1. Terminology for combinatorial and sequential integrated circuits 1.1 General terms 1.2 Terms related to functions 1.3 Types of circuits 1.4 Terms related to ratings and characteristics 1.5 Latch-up concept 2. Examples 3. Terminology for integrated circuit memories 3.1 General terms 3.2 General terms relating to memory function and organization 3.3 Types of memories 3.4 Terms related to ratings and characteristics 3.5 Typical waveforms for static read/write memories 3.6 Terms and descriptions for test patterns for memory testing 4. Terminology for integrated circuit microprocessors 5. Terminology for charge-transfer devices 6. Letter symbols for combinatorial and sequential circuits 7. Letter symbols for the dynamic parameters of sequential integrated circuits, including memories 8. Additional terms and definitions for digital integrated circuits Chapter III: Essential ratings and characteristics Section One - Digital integrated circuits, general 1. Circuit identification and description 1.1 Designation and type 1.2 Technology 1.3 Package identification 2. Functional specifications 2.1 Block diagram 2.2 Functional description 2.3 Complex structures 3. Ratings (limiting values) 3.1 Continuous voltages and currents 3.2 Non-continuous voltages and currents 3.3 Temperatures 3.4 Capability of sustaining a short circuit 4. Recommended operating conditions (within the specified operating temperature range) 5. Static electrical characteristics for bipolar integrated circuits, figures 27 and 28 5.1 Essential characteristics of the digital voltage signals 5.2 Input clamping voltage 5.3 Essential characteristics for input and output currents 5.3.2.1 Output off-state current IOZ 5.4 Applied conditions for worst case 5.5 Latch-up characteristics 6. Static and quasi-static electrical characteristics for MOS integrated circuits 6.1 Essential characteristics of the digital voltage signals 6.2 Essential characteristics for currents 6.3 Latch-up characteristics 7. Dynamic electrical characteristics 7.1 Introduction 7.2 Times characterizing the response of the circuit 7.3 Requirements at the inputs to ensure correct sequential operation 7.4 Input and output impedances 8. Total power or currents provided from the supplies 9. Total current drawn from the power supplies (dynamic operation) 10. Command pulse information (where appropriate) 11. Insulation resistance 12. Mechanical ratings, characteristics and other data 13. Supplementary information 13.1 Output loading capabilty 13.2 Noise margins 13.3 Interconnections of digital integrated circuits 14. Handling precautions Appendix to Section One - Specification of characteristics Section Two - Integrated circuit memories A. Static and dynamic read/write memories and read- only memories 1. Circuit identification and description 2. Functional specifications 2.1 Block diagram 2.2 Functional description 3. Ratings (limiting values) 4. Recommended operating conditions (within the specified operating temperature range) 5. Static electrical characteristics for bipolar memories 6. Static electrical characteristics for MOS memories 7. Dynamic electrical characteristics 7.1 Times characterizing the response of the circuit 7.2 Requirements at the inputs to ensure correct sequential operation 7.3 Input and output capacitances 8. Power or current drawn from each supply (static operation) 9. Power or current drawn from each supply (dynamic operation) 10. Mechanical ratings, characteristics and other data 11. Supplementary information 11.1 Output loading capabilty 11.2 Noise margins 11.3 Interconnections of similar units 11.4 Type of output circuit 11.5 Interconnections to other types of circuits 12. Handling precautions B. Field-prgrammable read-only memories 1. Circuit identification and description 2. Functional specifications 2.1 Block diagram 2.2 Identification of terminals 2.3 Functional description 3. Ratings (limiting values) 4. Read mode 4.1 Recommended operating conditions (within the specified operating temperature range) 4.2 Static electrical characteristics 4.3 Dynamic electrical characteristics 4.4 Timing requirements 5. Programming mode 5.1 Programming procedure 5.2 Recommended programming conditions 5.3 Timing requirements 6. Erasing mode (if applicable) 6.1 Electrically erasable memories 6.2 Ultraviolet erasable memories 7. Number of programming/erasing cycles 8. Data retention information 9. Power or current drawn from each supply (static operation) 10. Power or current drawn from each supply (dynamic operation) 11. Mechanical ratings, characteristics and other data 12. supplementary information 13. Handling precautions Section Three - Integrated circuit microprocessors 1. Circuit identification and description 1.4 Electrical compatibility 2. Functional specifications 2.1 Block diagram 2.2 Functional description 2.3 Instruction set 2.4 Configuration of instructions 2.5 Input and output signals 3. Ratings (limiting values) 3.1 Electrical limiting values 3.2 Temperatures 3.3 Power dissipation 4. Recommended operating conditions (within the specified operating temperature range) 4.1 Power supply voltage(s) 4.2 Clock inputs 4.3 Input voltages (excluding clock inputs) 4.4 Output currents 4.5 External elements (where appropriate) 4.6 Set-up and hold times 4.7 Timing diagrams for control sequences 5. Electrical characteristics 5.1 Static charcteristics 5.2 Dynamic characteristics 6. Mechanical ratings, characteristics and other data 7. supplementary information 7.1 Output loading capability 7.2 Noise margins 7.3 Application data 7.4 Other information 8. Handling precautions Chapter IV: Measuring methods Section One - General 1. Basic requirements 2. Specific requirements 2.1 General requirements for static and dynamic measurements 2.2 Specified conditions for static characteristics 2.3 Specified conditions for dynamic characteristics 3. Application matrix for the measuring methods Section Two - Measuring methods of static characteristics 1. High-level and low-level output voltages (VOH and VOL) [37] 2. High-level and low-level input currents (IIH and IIL) [38] 3. Short-circuit output current (IOS) [40] 4. Power supply current under static conditions [41] 5. (Input) threshold voltages and hysteresis voltage [48] Section Three - Dynamic measurements 1. Total current drawn from the power supplies under dynamic conditions [1] 2. Power supplied through the clock line [2] 3. Input and output impedances [6], [11] 3.1 Current measurement: input and output capacitances for large-signal operation [6] 3.2 Voltage measurement: equivalent input and output capacitances, equivalent input and output resistances [11] 4. Times characterizing the circuit 4.1 Propagation times [3], [7] 4.2 Delay and transition times [4], ][5] 4.3 Set-up time [8] and hold time [9] 4.4 Resolution time [36] 4.5 Output enable and disable times (for three-state outputs) [49] 4.6 Specific times for memories [50] to [54] 5. Switching frequency of a sequential circuit [10] 6. Method of verification of the function of a digital integrated circuit Chapter V: Acceptance and reliability Section One - Electrical endurance tests 1. General requirements 2. Specific requirements Table II
