IEC 62417 Ed. 1.0现行
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
出版：International Electrotechnical Committee
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基本信息
标准编号： IEC 62417 Ed. 1.0
发布时间：2010/4/22 0:00:00
标准类别：Standard
出版单位：International Electrotechnical Committee
标准页数：16
标准简介
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
等同采用的国际标准
BS EN 62417:2010 - Identical
